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Stacking Stability of Manganese and Gold Single Layer Inserted between 2D Bilayer System

Woohyeon Baek, Pavel V. Avramov
In recent years in material science, 2D layer type devices have attracted interests in electric and magnetic application such as filed-emitting transistor (FET) and magnetic tunnel transistor (MTT). For experimental synthesis in atomic-scale manufacture using chemical vapor deposition (CVD) and atomic layer deposition (ALD), theoretical design of stacking order should be preceded to check stability and possibility of existence. In this study, the AA stacking type of bilayer system of graphene, hexagonal boron nitride (h-BN), diamane and lonsdalane (hexagonal diamane) with inserted manganese and gold 2D layer were calculated using density functional theory (DFT).
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